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PDF BFG94 Data sheet ( Hoja de datos )
| Número de pieza | BFG94 | |
| Descripción | NPN 6 GHz wideband transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG94
NPN 6 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
1 page  
Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
+VBB
input
75 Ω
10 kΩ
L2
L1
1 nF
247 Ω
L3
1 nF
1 nF
DUT
+VCC
output
75 Ω
2 pF
33 Ω
33 Ω
MBB780
L1 = L3 = 5 µH micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2 Test circuit for second and third order
intermodulation distortion.
DUT
TEST
FIXTURE
BIAS
INPUT SLUG TUNER TEE
OUTPUT SLUG TUNER
BIAS
TEE
input
output
MBB789
Fig.3 Measurement set-up for third order
intercept point and 1 dB gain compression.
handboo8k,0h0alfpage
P tot
(mW)
600
MBB790
400
200
0
0 50 100 150 200
Ts (°C)
Fig.4 Power derating curve.
handbook1,2h0alfpage
h FE
80
MCD087
40
0
0 10
VCE = 10 V; Tj = 25 °C
20 IC (mA) 30
Fig.5 DC current gain as a function of collector
current.
September 1995
5
5 Page 
Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
handbook, full pagewidth
120°
150°
40 MHz
90°
50 40
180°
30 20 10
3 GHz
60°
30°
+ϕ
0°
−ϕ
150°
30°
IC = 45 mA; VCE = 10 V.
120°
60°
90° MBB785
Fig.19 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
50
25
100
10 250
+j
0
–j
3 GHz
10 25 50 100 250
∞
40 MHz
10 250
IC = 45 mA; VCE = 10 V.
ZO = 50 Ω.
September 1995
25 100
50 MBB783
Fig.20 Common emitter output reflection coefficient (S22).
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BFG94.PDF ] | |
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