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Número de pieza | BFG67W | |
Descripción | NPN 8 GHz wideband transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFG67W (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
August 1995
Philips Semiconductors
1 page Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
handboo1k,2h0alfpage
h FE
80
MBB301
40
0
0 20 40 I C (mA) 60
VCE = 5 V.
Fig.4 DC current gain as a function of collector
current; typical values.
handCboroek, h1alfpage
(pF)
0.8
0.6
0.4
0.2
0
0
4
MLB984
8 12 16
V CB (V)
IC = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
10
handbofoTk, halfpage
(GHz)
8
MLB985
6
4
2
0
0 10 20 30 40
IC (mA)
f = 2 GHz; VCE = 8 V; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
August 1995
5
5 Page Philips Semiconductors
NPN 8 GHz wideband transistor
handbook, full pagewidth
135 o
90o
3 GHz
Product specification
BFG67W
BFG67W/X; BFG67W/XR
45 o
180 o
0.25 0.20 0.15 0.10 0.05
40 MHz
0o
135 o
45 o
VCE = 8 V; IC = 15 mA.
90o
MLB995
Fig.18 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
135 o
0.5
90 o
1
2 45o
1.0
0.8
0.6
0.2
180 o 0
0.2
0.5
1
2
0.2 3 GHz
5
5
40 MHz
5
0.4
0.2
0o 0
135 o
0.5
VCE = 8 V; IC = 15 mA; Zo = 50 Ω.
1
90 o
2
45 o
MLB996
1.0
Fig.19 Common emitter output reflection coefficient (s22); typical values.
August 1995
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet BFG67W.PDF ] |
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