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PDF BFG25AW Data sheet ( Hoja de datos )
| Número de pieza | BFG25AW | |
| Descripción | NPN 5 GHz wideband transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DATA SHEET
book, halfpage
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Sep 23
1 page  
Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG25AW; BFG25AW/X
30
handbook, halfpage
gain
(dB)
20
10
MLB973
G UM
MSG
30
handbook, halfpage
gain
(dB)
20
10
MLB974
G UM
MSG
0
0 1 23
IC (mA)
f = 500 MHz; VCE = 1 V.
Fig.6 Gain as a function of collector current;
typical values.
0
0 1 23
IC (mA)
f = 1 GHz; VCE = 1 V.
Fig.7 Gain as a function of collector current;
typical values.
50
handgboaoink, halfpage
(dB)
40 G UM
30
MSG
20
10
0
10 102
MLB975
103 104
f (MHz)
50
handgboaoink, halfpage
(dB)
40 G UM
30
MSG
20
10
0
10 102
MLB976
103 104
f (MHz)
IC = 0.5 mA; VCE = 1 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Sep 23
IC = 1 mA; VCE = 1 V.
Fig.9 Gain as a function of frequency;
typical values.
5
5 Page 
Philips Semiconductors
NPN 5 GHz wideband transistors
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
DB
Product specification
BFG25AW; BFG25AW/X
SOT343N
E AX
y
4
e
3
1
b1
e1
2
bp
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
v
wy
mm
1.1
0.8
0.1
0.4
0.3
0.7 0.25 2.2
0.5 0.10 1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
0.1
OUTLINE
VERSION
SOT343N
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
1998 Sep 23
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BFG25AW.PDF ] | |
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