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PDF BFG235 Data sheet ( Hoja de datos )
| Número de pieza | BFG235 | |
| Descripción | NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFG235 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BFG 235
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
120mA to 250mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
• fT = 5.5 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 235 BFG235 Q62702-F1432
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 80 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
25
25
2
300
40
2000
150
- 65 ... + 150
- 65 ... + 150
≤ 35
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996
1 page  
BFG 235
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
7
pF
Ccb
5
4
3
2
1
0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
13
dB
G
11
10
10V
5V
3V
2V
9
8 1V
7
6
0.7V
5
0 50 100 150 200 mA 300
IC
Transition frequency fT = f (IC)
VCE = Parameter
6.0
GHz
5V
fT 5.0
4.5
4.0
1V
3.5
3.0 0.7V
2.5
2.0
1.5
1.0
0
50 100 150 200
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
mA 300
IC
9
dB
G7
6
5
10V
5V
3V
2V
4
1V
3
2 0.7V
1
0
0 50 100 150 200 mA 300
IC
Semiconductor Group
5
Dec-13-1996
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFG235.PDF ] | |
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