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Número de pieza | BFG19S | |
Descripción | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFG19S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
BFG 19S
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 19S BFG19S Q62702-F1359
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 75 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
20
3
100
12
1
150
- 65 ... + 150
- 65 ... + 150
≤ 75
Unit
V
mA
W
°C
K/W
Semiconductor Group
1
Dec-13-1996
1 page BFG 19S
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
2.6
pF
2.2
Ccb 2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
14
dB
G
10
10V
5V
3V
2V
Transition frequency fT = f (IC)
VCE = Parameter
6.0
GHz
fT 5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
20 40 60 80
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
5V
3V
2V
1V
0.7V
mA 120
IC
10
dB
G
6
10V
5V
3V
2V
84
1V
1V
62
4
0.7V
2
0 20 40 60 80 mA 120
IC
Semiconductor Group
5
0 0.7V
-2
0 20 40 60 80 mA 120
IC
Dec-13-1996
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BFG19S.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFG19 | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) | Siemens Semiconductor Group |
BFG19 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFG193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) | Siemens Semiconductor Group |
BFG193 | NPN Silicon RF Transistor | Infineon Technologies AG |
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