|
|
PDF BFG196 Data sheet ( Hoja de datos )
| Número de pieza | BFG196 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BFG196 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
Power amplifier for DECT and PCN Systems
fT = 7.5 GHz
F = 1.5 dB at 900 GHz
BFG196
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG196
Marking
BFG196
Pin Configuration
Package
1 = E 2 = B 3 = E 4 = C SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 90 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 2)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
12
20
20
2
100
12
800
150
-65 ... 150
-65 ... 150
75
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001
1 page  
BFG196
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
1.9
pF
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 4 8 12 16 V 22
VCB
Transition frequency fT = f (IC)
VCE = Parameter
9
GHz
7
6
5
4
3
2
1
0
0 20 40
10V
5V
3V
2V
1V
0.7V
60 80 mA 120
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
15
10V
dB
13
12
5V
3V
2V
11
10
9 1V
8
7 0.7V
6
5
0 20 40 60 80 mA 120
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
10
dB
8
7
5V
3V
2V
6
5
1V
4
3
0.7V
2
0 20 40 60 80 mA 120
IC
5 Jun-27-2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFG196.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFG19 | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) |  Siemens Semiconductor Group |
| BFG19 | NPN Silicon RF Transistor | Infineon Technologies AG |
| BFG193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) | Siemens Semiconductor Group |
| BFG193 | NPN Silicon RF Transistor | Infineon Technologies AG |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |