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PDF BFG196 Data sheet ( Hoja de datos )
| Número de pieza | BFG196 | |
| Descripción | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna and telecommunications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BFG 196
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
• Power amplifier for DECT and PCN systems
• fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 196 BFG196 Q62702-F1292
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 90 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
100
12
800
150
- 65 ... + 150
- 65 ... + 150
≤ 75
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996
1 page  
BFG 196
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
1.8
pF
Ccb 1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
15
dB
G 13
12
11
10
9
8
7
6
5
0
10V
5V
3V
2V
1V
0.7V
20 40 60 80 mA 120
IC
Transition frequency fT = f (IC)
VCE = Parameter
9
GHz
fT 7
6
10V 5V
3V
2V
5
4
1V
3
0.7V
2
1
0
0 20 40 60 80
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
mA 120
IC
10
dB
G
8
7
5V
3V
2V
6
5
1V
4
3
0.7V
2
0 20 40 60 80 mA 120
IC
Semiconductor Group
5
Dec-13-1996
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFG196.PDF ] | |
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