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PDF BFG194 Data sheet ( Hoja de datos )
| Número de pieza | BFG194 | |
| Descripción | PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFG194 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PNP Silicon RF Transistor
• For low distortion broadband amplifiers in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
BFG 194
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 194 BFG194 Q62702-F1321
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 75 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
3
100
10
1000
150
- 65 ... + 150
- 65 ... + 150
≤ 75
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Aug-22-1996
1 page  
BFG 194
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
4.0
pF
Ccb
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
12
dB
G
8
10V
5V
3V
2V
Transition frequency fT = f (IC)
VCE = Parameter
5.5
GHz
fT 4.5
4.0
3.5
3.0
2.5
10V
8V
5V
3V
2V
1V
2.0
1.5 0.7V
1.0
0
20 40 60 80
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
mA 120
IC
7.0
dB
G
5.0
10V
5V
3V
4.0 2V
6
1V
4
0.7V
2
0
0 20 40 60 80 mA 120
IC
3.0
2.0
1.0
0.0
-1.0
0
1V
0.7V
20 40 60 80 mA 120
IC
Semiconductor Group
5
Aug-22-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFG194.PDF ] | |
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