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PDF BFG193 Data sheet ( Hoja de datos )
| Número de pieza | BFG193 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFG193 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz
F = 1.3 dB at 900 MHz
BFG193
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG193
Marking
BFG193
Pin Configuration
Package
1 = E 2 = B 3 = E 4 = C SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 87 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 2)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
12
20
20
2
80
10
600
150
-65 ... 150
-65 ... 150
105
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001
1 page  
BFG193
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
1.3
pF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 4 8 12 16 V 22
VCB
Transition frequency fT = f (IC)
VCE = Parameter
9.0
GHz
10V
7.0
5V
6.0
5.0 3V
4.0 2V
3.0
1V
2.0 0.7V
1.0
0.0
0 10 20 30 40 50 60 70 mA 90
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
20
dB
16 10V
5V
14 3V
12 2V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
12
10V
dB
8
6
5V
3V
2V
10
8 1V
6
0.7V
4
0 10 20 30 40 50 60 70 mA 90
IC
4
1V
2
0.7V
0
0 10 20 30 40 50 60 70 mA 90
IC
5 Jun-27-2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFG193.PDF ] | |
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