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PDF BFG193 Data sheet ( Hoja de datos )

Número de pieza BFG193
Descripción NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BFG193 Hoja de datos, Descripción, Manual

NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
fT = 8GHz
F = 1.3dB at 900MHz
BFG 193
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 193 BFG193 Q62702-F1291
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 87 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
80
10
600
150
- 65 ... + 150
- 65 ... + 150
105
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996

1 page




BFG193 pdf
BFG 193
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.1
pF
Ccb 0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
20
dB
G
16
14
12
10V
5V
3V
2V
9.0
GHz
fT 7.0
6.0
5.0
10V
5V
3V
4.0 2V
3.0
1V
2.0
0.7V
1.0
0.0
0
10 20 30 40 50 60 70 mA 90
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
12
dB
G
8
6
10V
5V
3V
2V
10
8 1V
6
0.7V
4
0 10 20 30 40 50 60 70 mA 90
IC
4
1V
2
0.7V
0
0 10 20 30 40 50 60 70 mA 90
IC
Semiconductor Group
5
Dec-13-1996

5 Page










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