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PDF BFG135A Data sheet ( Hoja de datos )
| Número de pieza | BFG135A | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFG135A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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NPN Silicon RF Transistor
For low-distortion broadband amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
fT = 6 GHz
BFG 135A
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 135A
Marking
Pin Configuration
BFG135A 1 = E 2 = B 3 = E 4 = C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 100 °C F)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
15
25
25
2
150
20
1
150
-65 ... 150
-65 ... 150
50
Unit
V
mA
W
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-26-1999
1 page  
BFG 135A
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
4.0
pF
3.0
2.5
2.0
1.5
1.0
0.5
0.00
4
8
12
16 V
22
VCB
Transition frequency fT = f (IC)
VCE = Parameter
7.0
GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.00
10V
5V
3V
2V
1V
0.7V
20 40 60 80 100 120 140 mA 170
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
16
dB 10V
12
10
5V
3V
2V
8 1V
6
4 0.7V
2
00 20 40 60 80 100 120 140 mA 170
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
11
dB
9 10V
5V
8
3V
7
2V
6
5
4
1V
3
2
1
0.7V
00 20 40 60 80 100 120 140 mA 170
IC
5 Oct-26-1999
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFG135A.PDF ] | |
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