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PDF BFG11 Data sheet ( Hoja de datos )
| Número de pieza | BFG11 | |
| Descripción | NPN 2 GHz RF power transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Apr 07
Philips Semiconductors
1 page  
Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG11; BFG11/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
VCE
ICQ
(GHz)
(V)
(mA)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
1
PL
(mW)
400
Gp
(dB)
≥4
typ. 5
ηc
(%)
≥50
typ. 70
Ruggedness in class-AB operation
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
handbook, h8alfpage
Gp
(dB)
6
4
MLC849
100
ηc
η c (%)
80
Gp
60
handboo8k,0h0alfpage
PL
(mW)
600
400
MLC850
2 40 200
0 20
0 200 400 600 800
PL (mW)
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 400 mW.
Fig.4 Power gain and collector efficiency as
functions of load power; typical values.
0
0 100 200 300
PD (mW)
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 400 mW.
Fig.5 Load power as a function of drive power;
typical values.
1995 Apr 07
5
5 Page 
Philips Semiconductors
NPN 2 GHz RF power transistor
NOTES
Product specification
BFG11; BFG11/X
1995 Apr 07
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BFG11.PDF ] | |
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