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PDF BFC51 Data sheet ( Hoja de datos )
| Número de pieza | BFC51 | |
| Descripción | 4TH GENERATION MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFC51 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEME
LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
3.55 (0.140)
3.81 (0.150)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
5.25 (0.215)
BSC
BFC51
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
500V
16.0A
0.40Ω
Terminal 1 Gate
Terminal 3 Source
Terminal 2 Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS
Gate – Source Voltage
PD
TJ , TSTG
Total Power Dissipation @ Tcase = 25°C
Operating and Storage Junction Temperature Range
TL Lead Temperature : 0.063” from Case for 10 Sec.
500
16
64
±30
240
–55 to 150
300
V
A
A
V
W
°C
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
VGS = 0V , ID = 250µA
IDSS
IGSS
VGS(TH)
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 1.0mA
ID(ON)
RDS(ON)
On State Drain Current 2
Drain – Source On State Resistance 2
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Min.
500
2
16
Typ. Max. Unit
V
250
µA
1000
±100 nA
4V
A
0.40 Ω
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BFC51.PDF ] | |
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