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PDF BF996S Data sheet ( Hoja de datos )

Número de pieza BF996S
Descripción N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
Fabricantes Vishay Telefunken 
Logotipo Vishay Telefunken Logotipo



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BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
D High cross modulation performance
D Low input capacitance
D High AGC-range
21
G2 D
94 9279
13 579
34
BF996S Marking: MH
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
G1
12623
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Tamb 60 °C
Storage temperature range
Type
Symbol
VDS
ID
±IG1/G2SM
Ptot
TCh
Tstg
Value
20
30
10
200
150
–65 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85010
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (8)

1 page




BF996S pdf
2.0
1.8 VG2S=4V
1.6 f=1MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14 16 18 20
12856
VDS – Drain Source Voltage ( V )
Figure 7. Output Capacitance vs. Drain Source Voltage
10
f= 200MHz
0
–10
4V
3V
2V
1V
–20 0
–30
–0.2V
–0.4V
–0.6V
–40
–0.8V
–50 VG2S=–1V
–60
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0
12855
VG1S – Gate 1 Source Voltage ( V )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
20
18 VDS=15V
f=1MHz
16
14
4V
3V
2V
12 1V
10
8
6
4
2 VG2S=0
0.5V
0
0 2 4 6 8 10 12 14 16 18
12850
ID – Drain Current ( mA )
Figure 9. Forward Transadmittance vs. Drain Current
BF996S
Vishay Telefunken
20
18 f=1300MHz
16 1100MHz
14
900MHz
12
10 700MHz
8 500MHz
6 VDS=15V
4 300MHz
VG2S=4V
ID=10mA
2 100MHz
f=100...1300MHz
0
0 1 2 3 4 5 6 7 8 9 10
12857
Re (y11) ( mS )
Figure 10. Short Circuit Input Admittance
0
VDS=15V
VG2S=4V
–5 f=100...1300MHz
f=100MHz
300MHz
–10 500MHz
ID=5mA
–15
–20
–25
–15
10mA
700MHz
900MHz
15mA
1100MHz
1300MHz
–10 –5 0 5 10 15 20
12858
Re (y21) ( mS )
Figure 11. Short Circuit Forward Transfer Admittance
7
VDS=15V
6 VG2S=4V
ID=10mA
5 f=100...1300MHz
f=1300MHz
1100MHz
900MHz
4
700MHz
3
500MHz
2
300MHz
1
100MHz
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
12859
Re (y22) ( mS )
Figure 12. Short Circuit Output Admittance
Document Number 85010
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
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