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PDF BF992 Data sheet ( Hoja de datos )

Número de pieza BF992
Descripción Silicon N-channel dual gate MOS-FET
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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BF992
Silicon N-channel dual gate MOS-FET
Rev. 04 — 21 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors

1 page




BF992 pdf
NXP Semiconductors
Silicon N-channel dual gate MOS-FET
Product specification
BF992
handbIoDok,2h4alfpage
(mA)
20
MGE797
VG1-S = 0.2 V
16 0.1 V
0V
12
0.1 V
8 0.2 V
0.3 V
4 0.4 V
0.5 V
0.6 V
0
0 2 4 6 8 10 12
VDS (V)
VG2-S = 4 V; Tj = 25 °C.
Fig.3 Output characteristics; typical values.
30
handbook, halfpage
ID
(mA)
20
10
0
1
MGE799
4V3V
VG2-S = 5 V
2V
1V
0V
0 VG1-S (V) 1
VDS = 10 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
handbook,3h0alfpage
|yfs|
(mS)
20
MGE798
5V
4V
3V
2V
10
VG2-S = 0 V
1V
0
0 10 ID (mA) 20
VDS = 10 V; Tj = 25 °C.
Fig.5 Forward transfer admittance as a function
of drain current; typical values.
30
handbook, halfpage
Yfs
(mS)
20
10
0
1
MGE800
VG2-S =
5V
4V
3V
2V
1V
0V
0 VG1-S (V) 1
VDS = 10 V; Tj = 25 °C.
Fig.6 Forward transfer admittance as a function
of gate 1-source voltage; typical values.
Rev. 04 - 21 November 2007
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