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PDF BF988 Data sheet ( Hoja de datos )

Número de pieza BF988
Descripción N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
Fabricantes Vishay Telefunken 
Logotipo Vishay Telefunken Logotipo



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No Preview Available ! BF988 Hoja de datos, Descripción, Manual

BF988
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF- and UHF- tuners.
Features
D Integrated gate protection diodes
D High cross modulation performance
D Low noise figure
D High gain
D High AGC-range
D Low feedback capacitance
D Low input capacitance
3
2
4
94 9307
96 12647
1
BF988 Marking: BF988
Plastic case (TO 50)
1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2
G2
G1
12623
D
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Tamb 60 °C
Storage temperature range
Type
Symbol
VDS
ID
±IG1/G2SM
Ptot
TCh
Tstg
Value
12
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85007
Rev. 4, 08-Jul-99
www.vishay.de FaxBack +1-408-970-5600
1 (8)

1 page




BF988 pdf
4.0
VG2S=4V
3.2 VG1S=0
f=1MHz
2.4
1.6
0.8
0
2 4 6 8 10 12
12815
VDS – Drain Source Voltage ( V )
Figure 7. Output Capacitance vs. Drain Source Voltage
10
f= 800MHz
0
–10
–20
–30
–40
4V
3V
2V
1V
0
–0.2V
–0.4V
VG2S=–0.8V
–50
–1 –0.5 0.0 0.5 1.0 1.5
12818
VG1S – Gate 1 Source Voltage ( V )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
32
VDS=8V
28 f=1MHz
24
VG2S=4V
3V
20
16
2V
12
8
4 1V
0
0
0 4 8 12 16 20 24 28
12819
ID – Drain Current ( mA )
Figure 9. Forward Transadmittance vs. Drain Current
BF988
Vishay Telefunken
20
f=1300MHz
18
16
14 1000MHz
12
10 700MHz
8
6
400MHz
4
2 100MHz
0
024
6
VDS=8V
VG2S=4V
ID=10mA
f=100...1300MHz
8 10 12 14
12820
Re (y11) ( mS )
Figure 10. Short Circuit Input Admittance
5
0
VDS=8V
VG2S=4V
–5 f=100...1300MHz
f=100MHz
–10 ID=5mA
–15 10mA
–20 20mA
–25
400MHz
700MHz
–30 1000MHz
–35
1300MHz
–40
0 4 8 12 16 20 24 28 32
12821
Re (y21) ( mS )
Figure 11. Short Circuit Forward Transfer Admittance
9
8 f=1300MHz
7
6 1000MHz
5
4 700MHz
3
400MHz
VDS=15V
2 VG2S=4V
1
100MHz
ID=10mA
f=100...1300MHz
0
0 0.25 0.50 0.75 1.00 1.25 1.50
12822
Re (y22) ( mS )
Figure 12. Short Circuit Output Admittance
Document Number 85007
Rev. 4, 08-Jul-99
www.vishay.de FaxBack +1-408-970-5600
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