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PDF BF904WR Data sheet ( Hoja de datos )
| Número de pieza | BF904WR | |
| Descripción | N-channel dual-gate MOS-FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF904WR
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
1995 Apr 25
Philips Semiconductors
1 page  
Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF904WR
40
Y fs
(mS)
30
MLD268
20
10
0
50
0
50 100 150
Tj (oC)
Fig.3 Forward transfer admittance as a function
of junction temperature; typical values.
hangdbaoinok, ha0lfpage
reduction
(dB)
10
MRA769
20
30
40
50
01234
VAGC (V)
f = 50 MHz.
Tj = 25 °C.
Fig.4 Typical gain reduction as a function of
AGC voltage.
120
handbook, halfpage
Vunw
(dB µV)
110
MRA771
20
ID
(mA)
15
MLD270
VG2 S = 4 V 3 V 2.5 V
2V
100
90
80
0 10 20 30 40 50
gain reduction (dB)
VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.5 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.19.
10
1.5 V
5
1V
0
0 0.4 0.8 1.2 1.6 2.0
VG1 S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.6 Transfer characteristics; typical values.
1995 Apr 25
5
5 Page 
Philips Semiconductors
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
0.2 M A
0.2 M B
0.4
0.2
34
A
Product specification
BF904WR
1.00
max
0.1
max
0.2
Dimensions in mm.
2.2 1.35
2.0 1.15
21
1.4
1.2
2.2
1.8
0.7
0.5
0.3
0.1
B
0.25
0.10
MSB367
Fig.20 SOT343R.
1995 Apr 25
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BF904WR.PDF ] | |
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