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Datasheet BF621 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BF621PNP high-voltage transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BF621; BF623 PNP high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 21 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage
NXP Semiconductors
NXP Semiconductors
transistor
2BF621PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltage APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE – BF620 PARTMARKING DETAIL – DF BF621 C E C B SOT89 ABSOLUT
Zetex Semiconductors
Zetex Semiconductors
transistor
3BF621PNP high-voltage transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BF621; BF623 PNP high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 21 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage
NXP Semiconductors
NXP Semiconductors
transistor


BF6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BF60-940Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
2BF606APNP Silicon RF Transistor

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/
Siemens
Siemens
transistor
3BF60APNP Silicon RF Transistor

Siemens Semiconductors
Siemens Semiconductors
transistor
4BF620NPN Transistor

RoHS BF620 BF620 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 50 mA OV(BR)CBO: 300 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 IC
WEJ
WEJ
transistor
5BF620NPN Silicon High Voltage Medium-Power Transistor

PLANETA BF620 The Small-signal NPN Silicon High Voltage Medium-Power Transistor DESCRIPTION The BF620 is an NPN silicon epitaxial transistor designed for application as a video output to drive color CRT, telephony, professional communication equipment and other high voltage applications. It has dy
PLANETA
PLANETA
transistor
6BF620Silicon NPN epitaxial planer type Transistors

SMD Type Transistors Silicon NPN epitaxial planer type BF620; BF622 Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage BF620 (open emitte) BF622 collector-emitter voltage BF620 (open-base ) BF622 emitter-base v
Kexin
Kexin
transistor
7BF620NPN Transistor

BF620 TRANSISTOR (NPN) FEATURES z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. Marking:DC SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Colle
Jin Yu Semiconductor
Jin Yu Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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