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PDF BF423 Data sheet ( Hoja de datos )
| Número de pieza | BF423 | |
| Descripción | High Voltage Transistors(PNP) | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BF423 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistors
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol BF421
BF423
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–300
–250
–300
–250
–5.0
–500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = –1.0 mAdc, IB = 0)
BF421
BF423
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
BF421
BF423
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BF421
BF423
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
BF421
BF423
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
BF421
BF423
Order this document
by BF421/D
BF421
BF423
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–300
–250
–300
–250
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
–0.01
—
–100
—
Vdc
Vdc
Vdc
mAdc
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BF423.PDF ] | |
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