(PDF) BF256A Datasheet - N-Channel RF Amplifiers

Número de pieza	BF256A
Descripción	N-Channel RF Amplifiers
Fabricantes	Fairchild Semiconductor
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No Preview Available ! BF256A/BF256B/BF256C N-Channel RF Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current PD Total Device Dissipation @TA=25°C Derate above 25°C TSTG Operating and storage Temperature Range 1 TO-92 1. Gate 2. Source 3. Drain Value 30 -30 10 350 2.8 - 55 ~ 150 Units V V mA mW mW/°C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VGS Gate-Source VGS(off) Gate-Source Cutoff Voltage IGSS Gate Reverse Current On Characteristics VDS = 0, IG = 1µA VDS = 15V, ID = 200µA VDS = 15V, ID = 10nA VGS = -20V, VGS = 0 IDSS Zero-Gate Voltage Drain Current BF256A BF256B BF256C VGS = 15V, VGS = 0 Small Signal Characteristics gfs Common Source Forward Transconductance VDS = 15V, VGS = 0, f = 1KHz Min. Max. Units -30 -0.5 -7.5 -0.5 -8 -5 V V V nA 3 7 mA 6 13 11 18 4.5 mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 1 page

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PDF BF256A Data sheet ( Hoja de datos )