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PDF BF1202R Data sheet ( Hoja de datos )
| Número de pieza | BF1202R | |
| Descripción | N-channel dual-gate PoLo MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1202; BF1202R; BF1202WR
N-channel dual-gate PoLo
MOS-FETs
Product specification
Supersedes data of 1999 Dec 01
2000 Mar 29
1 page  
Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R;
BF1202WR
20
handbook, halfpage
ID
(mA)
16
12
8
VG2-S = 4 V
3.5 V
3V
MCD952
2.5 V
2V
1.5 V
4
1V
0
0 0.4 0.8 1.2 1.6 2
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
24
handbook, halfpage
ID
(mA)
16
8
MCD953
VG1-S = 1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
0.9 V
0
0 2 4 6 8 10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
handboo1k,0h0alfpage
IG1
(µA)
80
VG2-S = 4 V
MCD954
3.5 V
3V
60
2.5 V
40
2V
20
1.5 V
1V
0
0 0.5 1 1.5 2 2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
2000 Mar 29
handbook,4h0alfpage
yfs
(mS)
30
MCD955
3.5 V
VG2-S = 4 V
3V
20
2.5 V
10
0
04
2V
8 12 16 20
ID (mA)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a function
of drain current; typical values.
5
5 Page 
Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Plastic surface mounted package; reverse pinning; 4 leads
DB
Product specification
BF1202; BF1202R;
BF1202WR
SOT143R
E AX
y
vM A
e
bp w M B
34
HE
Q
21
b1
e1
A
A1
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1 0.48 0.88 0.15 3.0
0.38 0.78 0.09 2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55 0.45
0.25 0.25
0.2
0.1
0.1
OUTLINE
VERSION
SOT143R
2000 Mar 29
IEC
REFERENCES
JEDEC
EIAJ
SC-61B
11
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
99-09-13
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BF1202R.PDF ] | |
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