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PDF BF1005 Data sheet ( Hoja de datos )

Número de pieza BF1005
Descripción Silicon N-Channel MOSFET Tetrode
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! BF1005 Hoja de datos, Descripción, Manual

Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5V
Integrated biasing network
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF1005...
AGC
RF
Input
Drain RF Output
G2 + DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
MZs
MZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
8
25
10
3
200
-55 ... 150
150
V
mA
V
mW
°C
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20

1 page




BF1005 pdf
BF1005...
Forward transfer admittance
|Y21| = ƒ(VG2S)
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
f = 200MHz
26
mS
22
20
18
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VG2S
3
pF
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 V 5.5
VG2S
Output capacitance Cdss = ƒ(VG2S)
f = 200MHz
3
pF
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VG2S
5
2007-04-20

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