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Datasheet BDX34 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDX34 | NPN/PNP PLASTIC POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D
TO-220 Plastic Package
Power Darlington for Linear Switchilng Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
|  CDIL | transistor |
| 2 | BDX34 | Darlington Transistors BDX33, 34
Darlington Transistors
Features:
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C
• Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case)
Dimensions M |  Multicomp | transistor |
| 3 | BDX34 | Silicon PNP Power Transistors SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX34/A/B/C
DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C
APPLICATIONS ·For power linear and switching
applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector; |  SavantIC | transistor |
| 4 | BDX34 | Transistor de puissance PNP darlington BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W à 25°C Température du boîti |  Power Innovations Limited | transistor |
| 5 | BDX34 | PNP SILICON POWER DARLINGTONS BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W à 25°C Température du boîti | Power Innovations Limited | data |
BDX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDX10 | Bipolar NPN Device
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.19  Seme LAB data | | |
| 2 | BDX11 | Bipolar NPN Device BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 3 | BDX12 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BDX14 | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 5 | BDX14A | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Min.)
APPLICATIONS ·Designed for LF Large Signal Power Amplification
and Medium Current Switching
 Inchange Semiconductor transistor | | |
| 6 | BDX14A | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 7 | BDX14AA | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | |
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