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PDF BD810 Data sheet ( Hoja de datos )
| Número de pieza | BD810 | |
| Descripción | POWER TRANSISTORS PNP SILICON | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD810 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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ON Semiconductor)
Plastic High Power Silicon
Transistor
. . . designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
• DC Current Gain —
hFE = 30 (Min) @ IC = 2.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation TC =25_C
Derate above 25_C
VCEO
VCBO
VEBO
IC
IB
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Value
80
80
5.0
10
6.0
90
720
–55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C
Max Unit
1.39 _C/W
NPN
BD809
PNP
BD810
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
4
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–09
TO–220AB
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 1
1
Publication Order Number:
BD809/D
1 page  
Notes
BD809 BD810
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BD810.PDF ] | |
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