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Número de pieza | BD650 | |
Descripción | PNP SILICON POWER DARLINGTONS | |
Fabricantes | Power Innovations Limited | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BD650 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Copyright © 1997, Power Innovations Limited, UK
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BD645, BD647, BD649 and BD651
q 62.5 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q Minimum hFE of 750 at 3 V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-0.3
62.5
2
50
-65 to +150
-65 to +150
260
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
ø
3,96
3,71
see Note B
10,4
10,0
2,95
2,54
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
0,97
0,61
123
1,70
1,07
2,74
2,34
5,28
4,88
14,1
12,7
0,64
0,41
2,90
2,40
VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
VERSION 2
PRODUCT INFORMATION
MDXXBE
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BD650.PDF ] |
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