(PDF) BLY91C Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	BLY91C
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! BLY91C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY91C is Designed for 28 V Large Signal Class A,B and C Amplifier Applications up to 175 MHz. FEATURES INCLUDE: • Emitter Ballasting • Gold Metalization • 3/8" SOE Stud Package MAXIMUM RATINGS IC 1.0 A VCE 35 V VCB 65 V PDISS 20 W @ TC = 25 °C TJ -65 °C to + 200 °C TSTG -65 °C to + 150 °C θJC 8.7 °C/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCES IC = 200 mA BVCEO IC = 10 mA BVEBO IE = 1.0 mA ICES VCE = 36 V hFE VCE = 5.0 V IC = 400 mA COB VCB = 30 V f = 1.0 MHz PG ηC VCC =28 V POUT = 8.0 W f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 35 4.0 1.0 10 100 UNITS V V V mA --- 15 pF 12.0 13.0 65 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF BLY91C Data sheet ( Hoja de datos )