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PDF BLX93A Data sheet ( Hoja de datos )
| Número de pieza | BLX93A | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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BLX93A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX93A is Designed for
transmitting applications in class-A, B
or C with a supply voltage up to 28 V
FEATURES:
• High Gain - 9.0 dB
• Omnigold™ Metallization System
• Common Emitter
MAXIMUM RATINGS
IC 1.0 A
VCB 65 V
PDISS
12.5 W @ TC = 25 °C
TJ -65 to +200 °C
TSTG
-65 to +150 °C
θJC 9.8 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
D
E
F
B
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCBO
IC = 10 mA
BVCES
IC = 10 mA
BVCEO
IC = 25 mA
BVEBO
IE = 1.0 mA
hFE
VCE = 5.0 V
IC = 100 mA
FT
VCE = 5.0 V
IC = 200 mA
Cc VCB = 10 V
Ce VEB = 0 V
f = 1.0 MHz
f = 1.0 MHz
PG
ηC
VCE = 28 V
POUT = 7.0 W
f = 470 MHz
NONE
MINIMUM TYPICAL MAXIMUM
65
65
33
4.0
10
UNITS
V
V
V
V
---
1.2 GHz
14 pF
60 pF
8.5 9.0
60 75
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet BLX93A.PDF ] | |
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