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PDF BLW31 Data sheet ( Hoja de datos )
| Número de pieza | BLW31 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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BLW31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW31 is an NPN power
transistor, designed 108-175 MHz
applications. The device utilizes
diffused emitter resistors to achieve
good VSWR capability
FEATURES:
• Common Emitter-Class-C
• PG = 10 dB at 30 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO
36 V
VCEO
18 V
VEBO
4.0 V
PDISS
40 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 4.4 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
BC
EE
ØC
B
D
#8-32 UNC-2A
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
E
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
35 ---
UNITS
V
V
V
mA
---
COB VCB = 28 V
f = 1.0 MHz
250 pF
PG
ηC
VCC = 28 V
POUT = 25 W
f = 175 MHz
8.5
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BLW31.PDF ] | |
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