(PDF) BLV99 Datasheet - UHF power transistor

Número de pieza	BLV99
Descripción	UHF power transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product speciﬁcation September 1991 1 page Philips Semiconductors UHF power transistor Product speciﬁcation BLV99/SL APPLICATION INFORMATION RF performance Tmb = 25 °C in a common emitter class-B test circuit. MODE OF OPERATION f (MHz) VCE (V) c.w. narrow band 900 24 2 PL (W) Gp (dB) >8 typ. 9.3 ηc (%) > 55 typ. 63 handbook,1h0alfpage Gp (dB) 5 MBK469 100 handbook, h3alfpage Gp PL ηC (W) (%) 2 ηC 50 1 MBK470 00 0 123 PL (W) Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25 °C. Fig.5 Gain and efficiency as functions of load power, typical values. 0 0 0.1 0.2 0.3 0.4 PS (W) Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25 °C. Fig.6 Load power as a function of drive power, typical values. Ruggedness in class-B operation The BLV99/SL is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VCE = 24 V, f = 900 MHz, Tmb = 25 °C, and rated output power. September 1991 5 5 Page

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