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PDF BLV950 Data sheet ( Hoja de datos )
| Número de pieza | BLV950 | |
| Descripción | UHF push-pull power transistor | |
| Fabricantes | NXP Semiconductors | |
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Hay una vista previa y un enlace de descarga de BLV950 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV950
UHF push-pull power transistor
Product specification
Supersedes data of 1996 Jan 26
1997 Oct 27
1 page  
Philips Semiconductors
UHF push-pull power transistor
Product specification
BLV950
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.15 K/W.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
CW, class-AB
2-tone, class-AB
900
960
note 1
note 2
26
2 × 100
150
≥8
typ. 9
26
2 × 100
150
≥7.5
typ. 8.5
26 2 × 100 150 (PEP) ≥8.5
typ. 9.5
26
2 × 100 150 (PEP)
≥8
typ. 9
ηC
(%)
≥45
typ. 50
≥45
typ. 50
≥35
typ. 40
≥35
typ. 40
Notes
1. f1 = 900.0 MHz; f2 = 900.1 MHz.
2. f1 = 960.0 MHz; f2 = 960.1 MHz.
d3
(dBc)
−
−
≤−28
typ. −31
≤−30
typ. −33
Ruggedness in class-AB operation
The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the
conditions: PL = 150 W; f = 960 MHz; VCE = 26 V; ICQ = 2 × 100 mA; Th = 25 °C; Rth mb-h = 0.15 K/W and also a load
mismatch of VSWR = 5 : 1 through all phases at PL = 150 W (PEP) and f1 = 960.0 MHz and f2 = 960.1 MHz.
12
handbook, halfpage
Gp
(dB)
8
Gp
ηC
4
MLD258
60
ηC
(%)
40
20
00
0 50 100 150 200
P L (W)
VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz.
Fig.4 Power gain and efficiency as functions of
load power; typical values.
200
handbook, halfpage
PL
(W)
150
MLD259
100
50
0
0 10 20 30
P i (W)
VCE = 26 V; ICQ = 2 × 100 mA; f = 960 MHz.
Fig.5 Load power as a function of input power;
typical values.
1997 Oct 27
5
5 Page 
Philips Semiconductors
UHF push-pull power transistor
Product specification
BLV950
handbook, h8alfpage
Zi
(Ω)
6
MLD265 - 1
ri
4
xi
2
0
−2
840
880
920 960 1000
f (MHz)
VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device);
Th = 25 °C; Rth mb-h = 0.15 K/W.
Fig.11 Input impedance as a function of frequency
(series components); typical values per
section.
4
handbook, halfpage
ZL
(Ω)
2
MLD266 - 1
RL
0
XL
−2
−4
840 880 920 960 1000
f (MHz)
VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device);
Th = 25 °C; Rth mb-h = 0.15 K/W.
Fig.12 Load impedance as a function of frequency
(series components); typical values per
section.
12
handbook, halfpage
Gp
(dB)
8
MLD267
handbook, halfpage
4 Zi
ZL MBA451
0
840 880 920 960 1000
f (MHz)
VCE = 26 V; ICQ = 2 × 100 mA; PL = 150 W (total device);
Th = 25 °C; Rth mb-h = 0.15 K/W.
Fig.13 Power gain as a function of frequency;
typical values.
1997 Oct 27
11
Fig.14 Definition of transistor impedance.
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BLV950.PDF ] | |
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