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PDF BLV193 Data sheet ( Hoja de datos )
| Número de pieza | BLV193 | |
| Descripción | UHF power transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV193
UHF power transistor
Product specification
March 1993
1 page  
Philips Semiconductors
UHF power transistor
Product specification
BLV193
handbook1, 0h0alfpage
hFE
80
60
VCE = 12.5 V
10 V
MRA559
40
20
0
0 2 4 IC (A) 6
Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02.
Fig.4 DC current gain as a function of collector
current, typical values.
handbook,5h0alfpage
Cc
(pF)
40
MRA546
30
20
10
0
0 4 8 12 16
VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
handbook, 4h0alfpage
Cre
(pF)
30
MRA554
20
10
0
0 4 8 12 16
VCE (V)
f = 1 MHz.
Fig.6 Feedback capacitance as a function of
collector-emitter voltage, typical values.
March 1993
5
5 Page 
Philips Semiconductors
UHF power transistor
Product specification
BLV193
handbook, h5alfpage
Zi
(Ω)
4
3
2
xi
ri
MRA561
1
0
840
880
920 960
f (MHz)
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;
PL = 12 W; Th = 25 °C.
Fig.14 Input impedance (series components) as a
function of frequency, typical values.
handbook, h5alfpage
ZL
(Ω)
4
3
2
RL
XL
MRA548
1
0
840 880 920 960
f (MHz)
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;
PL = 12 W; Th = 25 °C.
Fig.15 Load impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
Zi
ZL MBA451
Fig.16 Definition of transistor impedance.
handbook, 1h0alfpage
Gp
(dB)
8
MRA556
6
4
2
0
840 880
920 f (MHz) 960
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;
PL = 12 W; Th = 25 °C.
Fig.17 Power gain as a function of frequency,
typical values.
March 1993
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BLV193.PDF ] | |
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