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Número de pieza | BLT50 | |
Descripción | UHF power transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLT50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BLT50
UHF power transistor
Product specification
April 1991
1 page Philips Semiconductors
UHF power transistor
Product specification
BLT50
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit.
MODE OF
OPERATION
f (MHz)
VCE (V)
PL (W)
c.w. narrow band
470 7.5
1.2
Gp (dB)
> 10
typ. 11.2
ηc (%)
> 55
typ. 65
handbook,1h6alfpage
Gp
(dB)
12
8
4
0
0.6 1.0
MEA219
100
η
Gp (%)
80
η
60
40
1.4 1.8 2.2
PL (W)
VCE = 7.5 V; f = 470 MHz.
Fig.4 Gain and efficiency as functions of load
power, typical values.
handbook, h2alfpage
PL
(W)
1
MEA220
0
0 100 200
PD (mW)
VCE = 7.5 V; f = 470 MHz.
Fig.5 Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and Ts ≤ 60 °C, where Ts is the temperature at the
soldering point of the collector tab.
April 1991
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BLT50.PDF ] |
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