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Número de pieza | BLF861 | |
Descripción | UHF power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF861 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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DATA SHEET
M3D392
BLF861
UHF power LDMOS transistor
Preliminary specification
1999 Aug 26
1 page Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF861
16
GP
(dB)
12
8
80
GP ηD
(%)
60
ηD
40
4 20
00
0 100 200 300
PL (PEP) (W)
Th = 25 °C; VDS = 32V; IDQ = 1.15 A;
2-tone: f1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB)
measured in 860 MHz testcircuit.
Fig.5 Power gain and drain efficiency as functions
of peak envelope load power; typical values.
0
dim
(dB)
-20
-40
d3
d5
-60
-80
0
100 200 300
PL (PEP) (W)
Th = 25 °C; VDS = 32 V; IDQ = 1.15 A;
2-tone: f1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB)
measured in 860 MHz testcircuit.
Fig.6 Intermodulation distortion as a function of
peak envelope output power; typical values.
16
GP
(dB)
12
8
80
GP
ηD
(%)
60
ηD
40
4 20
00
0 50 100 150 200
PL (W)
Th = 25 °C; VDS = 32 V; ; IDQ = 1.15 A; CW, class-AB; f = 860 MHz;
measured in 860 MHz testcircuit.
Fig.7 Power gain and drain efficiency as functions
of load power; typical values.
1999 Aug 26
5
5 Page Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF861
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 26
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BLF861.PDF ] |
Número de pieza | Descripción | Fabricantes |
BLF861 | UHF power LDMOS transistor | NXP Semiconductors |
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BLF861A | UHF power LDMOS transistor | NXP Semiconductors |
BLF861A | Trans RF MOSFET N-CH 65V 18A 5-Pin LDMOST | New Jersey Semiconductor |
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