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Número de pieza | BLF545 | |
Descripción | UHF push-pull power MOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF545 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BLF545
UHF push-pull power MOS
transistor
Product specification
October 1992
1 page Philips Semiconductors
UHF push-pull power MOS transistor
Product specification
BLF545
handbook, h2alfpage
RDSon
(Ω)
1.6
MDA506
1.2
0.8
0.4
0
0 50
ID = 1.2 A; VGS = 10 V.
100 Tj (°C) 150
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
100
handbook, halfpage
C
(pF)
80
MDA507
60
40 Cis
Cos
20
0
0 10
VGS = 0; f = 1 MHz.
20 30
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per
section.
handbook,4h0alfpage
Crs
(pF)
30
MDA508
20
10
0
0 10 20 30
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per
section.
October 1992
5
5 Page Philips Semiconductors
UHF push-pull power MOS transistor
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
Product specification
BLF545
SOT268A
D
A
F
5
U1 B
qC
H1 w2 M C
14
c
H U2
A
P
23
b
e
w3 M
w1 M A B
E
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
DE e
F
H H1 p
Q q U1 U2 w1
mm
4.91
4.19
1.66
1.39
0.13 12.96 6.48
0.07 12.44 6.22
6.45
2.04 17.02 8.23
1.77 16.00 7.72
3.43
3.17
2.67
2.41
18.42
24.90
24.63
6.61
6.35
0.51
inches
0.193
0.165
0.065 0.005
0.055 0.003
0.510
0.490
0.255
0.245
0.254
0.080
0.070
0.670
0.630
0.324
0.304
0.135
0.125
0.105
0.095
0.725
0.980
0.970
0.260
0.250
0.02
w2
1.02
0.04
w3
0.26
0.01
OUTLINE
VERSION
SOT268A
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
October 1992
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BLF545.PDF ] |
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