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Número de pieza | BLF277 | |
Descripción | VHF power MOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF277 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BLF277
VHF power MOS transistor
Product specification
September 1992
1 page Philips Semiconductors
VHF power MOS transistor
Product specification
BLF277
handbook0, .h4alfpage
RDS(on)
(Ω)
0.3
MGP222
0.2
0.1
0
0 50
ID = 5 A; VGS = 10 V.
100 Tj (°C) 150
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
1200
handbook, halfpage
C
(pF)
800
MGE615
Cis
400
Cos
0
0 20
VGS = 0; f = 1 MHz.
40 60
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
150
handbook, halfpage
Crs
(pF)
100
MGP223
50
0
0 20
VGS = 0; f = 1 MHz.
40 VDS (V) 60
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
5 Page Philips Semiconductors
VHF power MOS transistor
Product specification
BLF277
handbook,1h0alfpage
Zi
(Ω)
0
ri
xi
MGP226
−10
0
50 100 150
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
200 250
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values.
handbook,1h0alfpage
ZL
(Ω)
8
6
RL
MGP227
4
XL
2
0
0 50 100 150
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
200 250
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Zi
ZL MBA379
Fig.15 Definition of MOS impedance.
September 1992
handbook,4h0alfpage
Gp
(dB)
30
MGP228
20
10
0
0
50
100 150
200 250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
Fig.16 Power gain as a function of frequency,
typical values.
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet BLF277.PDF ] |
Número de pieza | Descripción | Fabricantes |
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