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PDF BLF276 Data sheet ( Hoja de datos )
| Número de pieza | BLF276 | |
| Descripción | VHF power MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF276
VHF power MOS transistor
Product specification
December 1997
1 page  
Philips Semiconductors
VHF power MOS transistor
Product specification
BLF276
1
handbook, halfpage
RDS (on)
(Ω)
0.8
MRA944
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140
Tj (°C)
ID = 3 A; VGS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
handbook6, 0ha0lfpage
C
(pF)
500
MRA934
400
300
Cis
200
Cos
100
0
0 10 20 30 40 50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, 5h0alfpage
Crs
(pF)
40
MRA935
30
20
10
0
0 10 20 30 40 50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
December 1997
5
5 Page 
Philips Semiconductors
VHF power MOS transistor
Product specification
BLF276
handbooZk,i h8alfpage
(Ω)
6
MRA939
4
2 ri
0
−2 xi
−4
−6
0 50 100 150 200 250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 50 mA;
RGS = 9.1 Ω; PL = 100 W.
Fig.13 Input impedance as a function of frequency
(series components), typical values.
handbook, 1h6alfpage
ZL
(Ω)
12
RL
8
XL
4
MRA941
0
0 50 100 150 200 250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 50 mA;
RGS = 9.1 Ω; PL = 100 W.
Fig.14 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Zi
ZL MBA379
Fig.15 Definition of MOS impedance.
December 1997
handbook, 3ha0lfpage
gain
(dB)
20
MRA938
10
0
0 50 100 150 200 250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 50 mA;
RGS = 9.1 Ω; PL = 100 W.
Fig.16 Power gain as a function of frequency,
typical values.
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BLF276.PDF ] | |
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