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PDF BLF147 Data sheet ( Hoja de datos )
| Número de pieza | BLF147 | |
| Descripción | VHF power MOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BLF147 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF147
VHF power MOS transistor
Product specification
September 1992
1 page  
Philips Semiconductors
VHF power MOS transistor
Product specification
BLF147
handboo1k,7h0alfpage
RDS (on)
(mΩ)
150
MGP052
130
110
90
0
50 100 Tj (°C) 150
ID = 8 A; VGS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
handboo1k4,0h0alfpage
C
(pF)
1200
MRA903
800
Cis
400
Cos
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handboo5k,0h0alfpage
Crs
(pF)
400
MRA902
300
200
100
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
5 Page 
Philips Semiconductors
VHF power MOS transistor
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
D
A
F
qC
U1 B
Product specification
BLF147
SOT121B
H
4
α
1
H
b
L
3 w2 M C
A
c
p U2
D1 U3
w1 M A B
2
Q
0 5 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
scale
UNIT A
b
c
D D1 F
HL
p Q q U1 U2 U3
mm
7.27
6.17
5.82
5.56
0.16 12.86 12.83 2.67 28.45 7.93
0.10 12.59 12.57 2.41 25.52 6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
inches
0.286
0.243
0.229
0.219
0.006
0.004
0.506
0.496
0.505
0.495
0.105
0.095
1.120
1.005
0.312
0.249
0.130
0.120
0.175
0.154
0.725
0.98
0.97
0.255 0.485
0.245 0.475
w1
0.51
0.02
w2
1.02
0.04
α
45°
OUTLINE
VERSION
SOT121B
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
September 1992
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLF147.PDF ] | |
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