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PDF BGA312 Data sheet ( Hoja de datos )
| Número de pieza | BGA312 | |
| Descripción | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BGA312 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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BGA 312
Silicon Bipolar MMIC-Amplifier
Preliminary data
• Cascadable 50 Ω-gain block
• 11 dB typical gain at 1.0 GHz
• 9 dBm typical P-1dB at 1.0 GHz
• 3 dB-bandwidth: DC to 2.0 GHz
RF IN 3
Circuit Diagram
4
1 RF OUT/Bias
3
2
1 VPS05178
Type Marking Ordering Code
BGA 312 BMs Q62702-G0042
2, 4 GND
EHA07312
Pin Configuration
1 RFout/bias 2 GND 3 RFinput
Package
4 GND SOT-143
Maximum Ratings
Parameter
Device current
Total power dissipation, TS ≤ 99 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
ID
Ptot
PRFin
Tj
TA
Tstg
RthJS
Value
60
250
10
150
-65 ...+150
-65 ...+150
Unit
mA
mW
dBm
°C
≤ 205
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BGA312.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BGA310 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) | Siemens Semiconductor Group |
| BGA312 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) | Siemens Semiconductor Group |
| BGA318 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | Siemens Semiconductor Group |
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