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PDF BG3230 Data sheet ( Hoja de datos )
| Número de pieza | BG3230 | |
| Descripción | DUAL N-Channel MOSFET Tetrode | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BG3230 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BG3230_BG3230R
DUAL N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated stabilized bias network
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range
4
5
6
3
2
1
VPS05604
BG3230
65
B
A
12
4
3
BG3230R
65
A
B
12
4
3
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3230
BG3230R
Package
SOT363
SOT363
1=G1
1=G1
Pin Configuration
2=G2 3=D 4=D 5=S
2=S 3=D 4=D 5=G2
6=G1
6=G1
Marking
KBs
KIs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
±VG1/G2S
Ptot
Tstg
Tch
Thermal Resistance
Parameter
Symbol
Channel - soldering point1)
Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
25
1
6
160
-55 ... 150
150
Value
≤ 280
Unit
V
mA
V
mW
°C
Unit
K/W
1 Feb-27-2004
1 page  
BG3230_BG3230R
AGC characteristic AGC = ƒ(VG2S)
f = 200 MHz
AGC characteristic AGC = ƒ(VG2S)
f = 800 MHz
0
dB
-20
-30
-40
-50
-60
-70
-80
-900 0.5 1 1.5 2 2.5 3 V
4
VG2
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
120
0
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-650 0.5 1 1.5 2 2.5 3 V
4
VG2
dBµV
100
90
800 10 20 30 dB 50
AGC
5
Feb-27-2004
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BG3230.PDF ] | |
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