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PDF BFY51 Data sheet ( Hoja de datos )

Número de pieza BFY51
Descripción MEDIUM POWER AMPLIFIER
Fabricantes STMicroelectronics 
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BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
V EBO
IC
ICM
Ptot
Tstg
Tj
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Total Dissipation at Tamb 25 oC
at Tcase 25 oC
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
BFY50
BFY51
80 60
35 30
6
1
1.5
0.8
5
-65 to 200
200
Unit
V
V
V
A
A
W
W
oC
oC
1/5

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BFY51 pdf
BFY50/BFY51
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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...
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