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PDF BFY196 Data sheet ( Hoja de datos )
| Número de pieza | BFY196 | |
| Descripción | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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HiRel NPN Silicon RF Transistor
BFY 196
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ For low noise, high gain amplifiers up to 2 GHz.
¥ For linear broadband amplifiers
¥ Hermetically sealed microwave package
¥ fT = 6.5 GHz, F = 3 dB at 2 GHz
¥ ESA Qualification pending
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFY 196 (ql)
Marking Ordering Code
- see below
Pin Configuration
C EBE
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1684
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol Limit Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS £ 104 °C 2)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
100
12 1)
700
200
- 65 É + 200
- 65 É + 200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction soldering point 2)
Rth JS
< 135
K/W
1) The maximum permissible base current for VFBE measurements is 50 mA (spot measurement duration < 1 s).
2) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Draft A03 1998-04-01
1 page  
BFY 196
1.02 ±0.1
2
XY
3
4
1.78
1
1.05 ±0.25
0.76
0.1
+0.05
-0.03
GXM05552
Figure 1 Micro-X1 Package
Semiconductor Group 5 Draft A03 1998-04-01
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BFY196.PDF ] | |
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