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PDF BFU510 Data sheet ( Hoja de datos )
| Número de pieza | BFU510 | |
| Descripción | NPN SiGe wideband transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFU510
NPN SiGe wideband transistor
Product specification
Supersedes data of 2001 Nov 08
2003 Jun 12
1 page  
Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU510
handboo2k,5h0alfpage
hFE
200
150
100
50
0
0
5
MLE137
10 15
IC (mA)
VCE = 2 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook,1h6alfpage
IC
(mA)
12
8
4
MLE138
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
0
01 23
VCE (V)
(1) IB = 180 µA.
(2) IB = 160 µA.
(3) IB = 140 µA.
(4) IB = 120 µA.
(5) IB = 100 µA.
(6) IB = 80 µA.
(7) IB = 60 µA.
(8) IB = 40 µA.
(9) IB = 20 µA.
Fig.4 Output characteristics; typical values.
40
handbook, halfpage
fT
(GHz)
30
MLE139
20
10
0
1 10
IC (mA)
VCB = 1 V; f = 2 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
2003 Jun 12
40
handbook, halfpage
gain
(dB)
30
20
10
0
102
MLE140
MSG
s21 Gmax
103 104
f (MHz)
IC = 10 mA; VCE = 2 V; Tamb = 25 °C.
Fig.6 Gain as a function of frequency; typical
values.
5
5 Page 
Philips Semiconductors
NPN SiGe wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
Product specification
BFU510
SOT343R
DB
E AX
y
3
e
4
2
wM B
bp
e1
1
b1
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
v
wy
mm
1.1
0.8
0.1
0.4
0.3
0.7 0.25 2.2
0.5 0.10 1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
0.1
OUTLINE
VERSION
SOT343R
2003 Jun 12
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BFU510.PDF ] | |
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