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Número de pieza | BFT93 | |
Descripción | PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFT93 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! PNP Silicon RF Transistor
• For low distortion broadband amplifiers up to
1 GHz at collector currents from 2mA up
to 20mA
BFT 93
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFT 93
X1s
Q62702-F1063
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 58 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
15
2
35
3
300
150
- 65 ... + 150
- 65 ... + 150
≤ 305
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996
1 page BFT 93
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
400
mW
Ptot
300
250 TS
200
TA
150
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
K/W
RthJS
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 2
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-12-1996
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BFT93.PDF ] |
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