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PDF BFS483 Data sheet ( Hoja de datos )
| Número de pieza | BFS483 | |
| Descripción | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFS483 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifier
at colector current from 2mA to 28mA
• fT = 8GHz
F = 1.2dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 483
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 483 RHs
Q62702-F1574
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 40 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
65
5
450
150
- 65 ... + 150
- 65 ... + 150
≤ 245
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996
1 page  
BFS 483
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
1.0
pF
Ccb 0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
20
dB
G 16
14
12
10
8V
5V
3V
2V
8
1V
6
0.7V
4
2
0
0 10 20 30 40 50 60 mA 75
IC
Transition frequency fT = f (IC)
VCE = Parameter
8
GHZ
fT
6
5
8V
4
5V
3 3V
2V
2 1V
0.7V
1
0
0 10 20 30 40 50 60 mA 75
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
14
dB
G
10
8
6
4
8V
5V
3V
2V
2 1V
0 0.7V
0 10 20 30 40 50 60 mA 75
IC
Semiconductor Group
5
Dec-16-1996
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFS483.PDF ] | |
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