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PDF BFS482 Data sheet ( Hoja de datos )
| Número de pieza | BFS482 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFS482 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BFS482
NPN Silicon RF Transistor
For low-noise. high-gain broadband amplifiers
at collector currents from 0.2 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1 E2
65
B2
4
4
5
6
3
2
1
VPS05604
TR2
TR1
123
B1 E1 C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS482
Marking
RGs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 81 °C 1)
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
12
20
20
2
35
4
250
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
275
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001
1 page  
BFS482
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.50
pF
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 4 8 12 16 V 24
VCB
Transition frequency fT = f (IC)
VCE = Parameter
8.0
GHz
8V
6.0
5V
5.0
4.0 3V
2V
3.0
1V
2.0
0.7V
1.0
0.0
0 5 10 15 20 25 30 35 mA 45
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
22
dB
10V
18
5V
16
3V
14
2V
12
10 1V
8
0.7V
6
0 5 10 15 20 25 30 35 mA 45
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
14
8V
dB
10
5V
3V
8 2V
6
1V
4
0.7V
2
0
0 5 10 15 20 25 30 35 mA 45
IC
5 Jun-27-2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFS482.PDF ] | |
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