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PDF BFS481 Data sheet ( Hoja de datos )
| Número de pieza | BFS481 | |
| Descripción | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFS481 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifier
at collector currents from 0.5 to 12 mA
• fT = 8 GHz
F = 1.4 dB at 900 MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 481
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 481 RFs
Q62702-F1572
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 83 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
20
2
175
150
- 65 ... + 150
- 65 ... + 150
≤ 380
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996
1 page  
BFS 481
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
0.40
pF
Ccb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
V 22
VR
22
dB
G 18
10V
5V
16
3V
14
2V
12
10
1V
8
0.7V
6
4
0 5 10 15 mA 25
IC
Transition frequency fT = f (IC)
VCE = Parameter
9
GHz
fT 7
6
10V
8V
5 5V
4
3
2
1
0
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
3V
2V
1V
0.7V
mA
IC
24
16
dB
G
12
10V
5V
10
3V
8
2V
6
4 1V
2
0.7V
0
0 5 10 15 mA 25
IC
Semiconductor Group
5
Dec-16-1996
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFS481.PDF ] | |
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