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PDF BFS480 Data sheet ( Hoja de datos )
| Número de pieza | BFS480 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFS480 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BFS480
NPN Silicon RF Transistor
For low noise, low-power amplifiersin mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
fT = 7 GHz
F = 1.5 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1 E2 B2
654
4
5
6
3
2
1
VPS05604
TR2
TR1
123
B1 E1 C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS480
Marking
REs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 112 °C 1)
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
8
10
10
2
10
1.2
80
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
470
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001
1 page  
BFS480
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.40
pF
0.30
0.25
0.20
0.15
0.10
0.05
Transition frequency fT = f (IC)
VCE = Parameter
10
GHz
8
7
6
5
4
3
2
10V
5V
3V
2V
1V
0.7V
0.00
0 2 4 6 8 V 12
VCB
1
0
2
4
6
8 mA
12
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
22
dB
8V
2V
18
16
1V
14
0.7V
12
10
8
0
2
4
6
8 mA
12
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
15
dB
13
12
8V
3V
2V
11
10
9 1V
8
7 0.7V
6
5
0
2
4
6
8 mA
12
IC
5 Jun-27-2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFS480.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFS480 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) |  Siemens Semiconductor Group |
| BFS480 | NPN Silicon RF Transistor | Infineon Technologies AG |
| BFS481 | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) | Siemens Semiconductor Group |
| BFS481 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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