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PDF BFS17W Data sheet ( Hoja de datos )
| Número de pieza | BFS17W | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package
BFS17W
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17W
Marking
Pin Configuration
MCs
1=B
2=E
3=C
Package
SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation1)
TS ≤ 93 °C
Junction temperature
Ambient temperature
VCEO
VCBO
VEBO
IC
ICM
Ptot
TJ
TA
15
25
2.5
25
50
280
150
-65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
≤ 205
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-07-20
1 page  
Transition frequency fT= ƒ(IC)
VCE = parameter
3
GHz
2
1.5
10V
5V
3V
2V
1
1V
0.5
0.7V
00 5 10 15 20 mA 30
IC
BFS17W
5 2011-07-20
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFS17W.PDF ] | |
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