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PDF BFS17LT1 Data sheet ( Hoja de datos )

Número de pieza BFS17LT1
Descripción RF TRANSISTOR NPN SILICON
Fabricantes Motorola Inc 
Logotipo Motorola  Inc Logotipo



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No Preview Available ! BFS17LT1 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components.
T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
VCEO
VCBO
TJmax
Symbol
15
25
150
Max
Vdc
Vdc
°C
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C (1)
PD 350 mW
2.8 mW/°C
Storage Temperature
Thermal Resistance Junction to Ambient (1)
DEVICE MARKING
Tstg
RθJA
– 55 to +150
357
°C
°C/W
BFS17LT1 = E1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA)
Collector–Base Breakdown Voltage (IC = 100 µA)
Collector Cutoff Current (VCE = 10 V)
Collector Cutoff Current (VCB = 10 V)
Emitter Cutoff Current (VEB = 4 V)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
ICEO
ICBO
IEBO
DC Current Gain
(IC = 2 mA, VCE = 1 V)
(IC = 25 mA, VCE = 1 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Current–Gain — Bandwidth Product
(IC = 2 mA, VCE = 5 V, f = 500 MHz)
(IC = 25 mA, VCE = 5 V, f = 500 MHz)
Output Capacitance (VCB = 10 V, f = 1 MHz)
Noise Figure (IC = 2 mA, VCE = 5 V, RS = 50 , f = 30 MHz)
NOTE:
1. Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
fT
CCB
NF
Min
15
25
20
20
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
Order this document
by BFS17LT1/D
BFS17LT1
RF TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Typ Max Unit
— — Vdc
— — Vdc
— 25 nA
— 25 nA
— 100 µA
— 150
——
— 0.4 V
—1 V
GHz
1—
1.3 —
1 — pF
5 — dB
BFS17LT1
1

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