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PDF BFR93P Data sheet ( Hoja de datos )
| Número de pieza | BFR93P | |
| Descripción | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
q For low-distortion broadband amplifiers up to 1 GHz
at collector currents from 2 mA to 30 mA.
q CECC-type available: CECC 50002/256.
BFR 93P
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFR 93P
Marking
GG
Ordering Code
(tape and reel)
Q62702-F1051
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 65 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15 V
20
2.5
50 mA
10
280 mW
150 ˚C
– 65 … + 150
– 65 … + 150
Rth JA
Rth JS
≤ 385
≤ 305
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1 page  
BFR 93P
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
Γopt
GHz dB dB MAG ANG
IC = 2 mA, VCE = 8 V, Z0 = 50 Ω
0.01 1.0
–
(ZS = 150 Ω)
IC = 10 mA, VCE = 8 V, Z0 = 50 Ω
0.01 1.5
0.8 2.3
–
–
(ZS = 90 Ω)
(ZS = ZSopt)
RN
Ω
–
–
–
N
–
–
–
–
F50 Ω
dB
G p(F50Ω)
dB
1.6 –
1.7 –
2.4 –
Noise figure F = f (ZS)
VCE = 8 V, f = 10 MHz
Noise figure F = f (IC)
VCE = 8 V, f = 800 MHz, ZLopt (G)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BFR93P.PDF ] | |
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